1 of 2 features @ t a = 25 c unless otherwise specified features mechanical data a d c b quadromelf dim min max a 3.3 3.7 b 1.4 1.6 c 1.7 typical d 0.3 typical all dimensions in mm 150ma surface mount fast switching diode maximum ratings and electrical characteristics component in accordance to rohs 2002/95/ec lead (pb)-free component quadro melf package electrical data iden silicon epitaxial planar diodes tical with the devices 1n4148 and 1n4448 respectively and weee 2002/96/ec case: quadromelf glass case (sod80) weight: approx. 34 mg cathode band color: black packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/2.5 k per 7" reel (8 mm tape), 12.5 k/box ls4148/LS4448 parameter test condition symbol value unit repetitive peak reverse voltage v rrm 100 v reverse voltage v r 75 v peak forward surge current t p = 1 s i fsm 2a repetitive peak forward current i frm 500 ma forward continuous current i f 300 ma average forward current v r = 0 i fav 150 ma power dissipation p tot 500 mw parameter test condition part symbol min ty p. max unit forward voltage i f = 5 ma LS4448 v f 620 720 mv i f = 50 ma ls4148 v f 860 1000 mv i f = 100 ma LS4448 v f 930 1000 mv reverse current v r = 20 v i r 25 na v r = 20 v, t j = 150 c i r 50 a v r = 75 v i r 5a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms v (br) 100 v diode capacitance v r = 0, f = 1 mhz, v hf = 50 mv c d 4pf rectification efficiency v hf = 2 v, f = 100 mhz r 45 % reverse recovery time i f = i r = 10 ma, i r = 1 ma t rr 8ns i f = 10 ma, v r = 6 v, i r = 0.1 x i r , r l = 100 t rr 4ns
2 of 2 figure 1. forward current vs. forward voltage figure 2. forward current vs. forward voltage 0 0.4 0. 8 1.2 1.6 0.1 1 10 100 1000 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) 2.0 16640 ls414 8 t j = 25 c scattering limit ls444 8 t j = 25 c scattering limit 0 0.4 0. 8 1.2 1.6 0.1 1 10 100 1000 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) 2.0 16642 figure 3. reverse current vs. reverse voltage figure 4. diode capacitance vs. reverse voltage 1 10 100 1000 i r - re v erse c u rrent (na) v r - re v erse v oltage ( v ) 10 1 100 94 909 8 t j = 25 c scattering limit 0.1 1 10 0 0.5 1.0 1.5 2.0 3.0 c d - diode capacitance (pf) 100 94 9099 2.5 v r - re v erse v oltage ( v ) f = 1 mhz t j = 25 c
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